Click here to sign in with or
Breakthroughs in modern microelectronics depend on understanding and manipulating the movement of electrons in metal. Reducing the thickness of metal sheets to the order of nanometers can enable exquisite control over how the metal's electrons move. By doing so, one can impart properties that aren't seen in bulk metals, such as ultrafast conduction of electricity. Now, researchers from Osaka University and collaborating partners have synthesized a novel class of nanostructured superlattices. This study enables an unusually high degree of control over the movement of electrons within metal semiconductors, which promises to enhance the functionality of everyday technologies.
Precisely tuning the architecture of metal nanosheets, and thus facilitating advanced microelectronic functionalities, remains an ongoing line of work worldwide. In fact, several Nobel prizes have been awarded on this topic. Researchers conventionally synthesize nanostructured superlattices—regularly alternating layers of metals, sandwiched together—from materials of the same dimension; for example, sandwiched 2D sheets. A key aspect of the present researchers' work is its facile fabrication of hetero-dimensional superlattices; for example, 1D nanoparticle chains sandwiched within 2D nanosheets.
"Nanoscale hetero-dimensional superlattices are typically challenging to prepare, but can exhibit valuable physical properties, such as anisotropic electrical conductivity," explains Yung-Chang Lin, senior author. "We developed a versatile means of preparing such structures, and in so doing we will inspire synthesis of a wide range of custom superstructures."
The researchers used chemical vapor deposition—a common nanofabrication technique in industry—to prepare vanadium-based superlattices. These magnetic semiconductors exhibit what is known as an anisotropic anomalous Hall effect (AHE): meaning directionally focused charge accumulation under in-plane magnetic field conditions (in which the conventional Hall effect isn't observed). Usually, the AHE is observed only at ultra-low temperatures. In the present research, the AHE was observed at room temperature and higher, up to around at least the boiling point of water. Generation of the AHE at practical temperatures will facilitate its use in everyday technologies.
"A key promise of nanotechnology is its provision of functionalities that you can't get from bulk materials," states Lin. "Our demonstration of an unconventional anomalous Hall effect at room temperature and above opens up a wealth of possibilities for future semiconductor technology, all accessible by conventional nanofabrication processes."
The present work will help improve the density of data storage, the efficiency of lighting, and the speed of electronic devices. By precisely controlling the nanoscale architecture of metals that are commonly used in industry, researchers will fabricate uniquely versatile technology that surpasses the functionality of natural materials.
The article, "Heterodimensional superlattice with room-temperature anomalous Hall effect," was published in Nature. Explore further Scientists unravel 'Hall effect' mystery in search for next generation memory storage devices More information: Zheng Liu, Heterodimensional superlattice with room temperature anomalous Hall effect, Nature (2022). DOI: 10.1038/s41586-022-05031-2. www.nature.com/articles/s41586-022-05031-2 Journal information: Nature
Provided by Osaka University Citation: Simple technique ushers in long-sought class of semiconductors (2022, August 31) retrieved 2 September 2022 from https://phys.org/news/2022-08-simple-technique-ushers-long-sought-class.html This document is subject to copyright. Apart from any fair dealing for the purpose of private study or research, no part may be reproduced without the written permission. The content is provided for information purposes only.More from Materials and Chemical Engineering
Use this form if you have come across a typo, inaccuracy or would like to send an edit request for the content on this page. For general inquiries, please use our contact form. For general feedback, use the public comments section below (please adhere to guidelines).
Please select the most appropriate category to facilitate processing of your request
Thank you for taking time to provide your feedback to the editors.
Your feedback is important to us. However, we do not guarantee individual replies due to the high volume of messages.
Your email address is used only to let the recipient know who sent the email. Neither your address nor the recipient's address will be used for any other purpose. The information you enter will appear in your e-mail message and is not retained by Phys.org in any form.
Get weekly and/or daily updates delivered to your inbox. You can unsubscribe at any time and we'll never share your details to third parties.
Medical research advances and health news
The latest engineering, electronics and technology advances
The most comprehensive sci-tech news coverage on the web
This site uses cookies to assist with navigation, analyse your use of our services, collect data for ads personalisation and provide content from third parties. By using our site, you acknowledge that you have read and understand our Privacy Policy and Terms of Use.